irlr/u2905 preliminary hexfet ? power mosfet s d g parameter typ. max. units r q jc junction-to-case CCC 1.4 r q ja case-to-ambient (pcb mount)** CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistance v dss = 55v r ds(on) = 0.027 w i d = 42a ? description www.irf.com 1 d -pak to-252aa i-pak to-251aa l logic-level gate drive l ultra low on-resistance l surface mount (IRLR2905) l straight lead (irlu2905) l advanced process technology l fast switching l fully avalanche rated fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through-hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ** when mounted on 1" square pcb (fr-4 or g-10 material ) . for recommended footprint and soldering techniques refer to application note #an-994 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 42 ? i d @ t c = 100c continuous drain current, v gs @ 10v 30 a i dm pulsed drain current ? 160 p d @t c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy ? 210 mj i ar avalanche current ? 25 a e ar repetitive avalanche energy ? 11 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings pd- 9.1334c
irlr/u2905 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 25a, v gs = 0v ? t rr reverse recovery time CCC 80 120 ns t j = 25c, i f = 25a q rr reverse recovery charge CCC 210 320 nc di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 42 ? 160 a ? v dd = 25v, starting t j = 25c, l =470h r g = 25 w , i as = 25a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? pulse width 300s; duty cycle 2%. ? this is applied for i-pak, l s of d-pak is measured between lead and center of die contact. ? uses irlz44n data and test conditions. ? i sd 25a, di/dt 270a/s, v dd v (br)dss , t j 175c notes: parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.070 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.027 v gs = 10v, i d = 25a ? CCC CCC 0.030 w v gs = 5.0v, i d = 25a ? CCC CCC 0.040 v gs = 4.0v, i d = 21a ? v gs(th) gate threshold voltage 1.0 CCC 2.0 v v ds = v gs , i d = 250a g fs forward transconductance 21 CCC CCC s v ds = 25v, i d = 25a ? CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 16v gate-to-source reverse leakage CCC CCC -100 v gs = -16v q g total gate charge CCC CCC 48 i d = 25a q gs gate-to-source charge CCC CCC 8.6 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 25 v gs = 5.0v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 11 CCC v dd = 28v t r rise time CCC 84 CCC ns i d = 25a t d(off) turn-off delay time CCC 26 CCC r g = 3.4 w, v gs = 5.0v t f fall time CCC 15 CCC r d = 1.1 w, see fig. 10 ?? between lead, 6mm (0.25in.) from package and center of die contact ? c iss input capacitance CCC 1700 CCC v gs = 0v c oss output capacitance CCC 400 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 150 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) nh i gss s d g l s internal source inductance CCC 7.5 CCC r ds(on) static drain-to-source on-resistance l d internal drain inductance CCC 4.5 CCC i dss drain-to-source leakage current ? caculated continuous current based on maximum allowable junction temperature; package limitation current = 20a.
irlr/u2905 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20s pulse w idth t = 25c j vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20s pulse w idth t = 175c vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v j 1 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 t = 25c j gs v , gate-to-source volta g e ( v ) d i , drain-to-source current (a) t = 175c j a v = 25v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source o n resistance ds(on) (n orm alized) v = 10v gs a i = 41a d
irlr/u2905 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 400 800 1200 1600 2000 2400 2800 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss 0 3 6 9 12 15 0 10203040506070 q , total g ate char g e (nc) g v , g ate-to-source voltage (v) gs a for test circuit see figure 13 v = 44v v = 28v i = 25a ds ds d 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 t = 25c j v = 0v gs v , source-to-drain volta g e ( v ) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source volta g e (v) ds i , drain current (a) operation in this area limited by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c single pulse c j
irlr/u2905 www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 5v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irlr/u2905 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 0 100 200 300 400 500 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a startin g t , junction temperature (c) i top 10a 17a bottom 25a v = 25v d dd
irlr/u2905 www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irlr/u2905 8 www.irf.com package outline to-252aa outline dimensions are shown in millimeters (inches) to-252aa (d-park) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) min. 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - d ra in 3 - s ou rce 4 - d ra in 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions show n are before solder dip, solder dip max. +0.16 (.006). international rectifier lo go assembly lo t code exa m ple : this is an irfr120 w ith assembly lot code 9u1p first portion of part number second portion of part number 120 irfr 9u 1p a
irlr/u2905 www.irf.com 9 package outline to-251aa outline dimensions are shown in millimeters (inches) to-251aa (i-park) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a te 2 - d rain 3 - s o u rc e 4 - d rain notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions show n are before solder dip, solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) international rectifier lo go assembly lot co de first po rtion of part numbe r second portion of part number 120 9u 1p exam ple : this is an irfu120 w ith assembly lo t code 9u1p irfu
irlr/u2905 10 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 4/98 tape & reel information to-252aa dimensions are shown in millimeters (inches) tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inc h
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